STW47NM60ND Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 600 V, 0.075 Ω typ., 35 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package

STW47NM60ND
N-channel 600 V, 0.075 Ω typ., 35 A FDmesh™ II Power MOSFET
(with fast diode) in a TO-247 package
Datasheet — production data
Features
Order code
STW47NM60ND
V_DS @
T_JMAX
650 V
R_DS(on)
max
0.088 Ω
I_D
35 A
■ The worldwide best R_DS(on)*area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities.
Application
■ Switching applications
– Automotive
Description
This device is an N-channel Power MOSFET
realized using the second generation of
MDmesh™ technology known as FDmesh™ II.
This revolutionary Power MOSFET associates a
new vertical structure to the company’s strip
layout and associates all advantages of reduced
on-resistance and fast switching with an intrinsic
fast-recovery body diode. It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
3
2
1
TO-247
Figure 1. Internal schematic diagram
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Table 1. Device summary
Order code
STW47NM60ND
Marking
47NM60ND
Package
TO-247
Packaging
Tube
November 2012
This is information on a product in full production.
Doc ID 18281 Rev 3
1/12
www.st.com
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