STW47NM60 Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL 600V - 0.075ohm - 47A TO-247 MDmesh™Power MOSFET

STW47NM60
N-CHANNEL 600V - 0.075Ω - 47A TO-247
MDmesh™Power MOSFET
ADVANCED DATA
TYPE
V_DSS R_DS(on) R_ds(on)*Q_g
I_D
STW47NM60 600V < 0.09Ω 7.2 Ω*nC 47 A
TYPICAL R_DS(on) = 0.075Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
3
2
1
TO-247
DESCRIPTION
This improved version of MDmesh™ which is based
on Multiple Drain process represents the new
benchmark in high voltage MOSFETs. The resulting
product exhibits even lower on-resistance, impres-
sively high dv/dt and excellent avalanche character-
istics. The adoption of the Company’s proprietary
strip technique yields overall performances that are
significantly better than that of similar competition’s
products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM ( ) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
January 2003
Value
Unit
600
V
600
V
±30
V
47
A
28
A
180
A
417
W
3.33
W/°C
15
V/ns
–65 to 150
°C
150
°C
(1) I_SD ≤47A, di/dt ≤400A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
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