STW47NM50 Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL 500V - 0.065ohm - 45A TO-247 MDmesh™Power MOSFET

STW47NM50
N-CHANNEL 500V - 0.065Ω - 45A TO-247
MDmesh™Power MOSFET
ADVANCED DATA
TYPE
V_DSS
R_DS(on) R_ds(on)*Q_g I_D
STW47NM50 500V < 0.085Ω 5.6 Ω*nC 45 A
TYPICAL R_DS(on) = 0.065Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
3
2
1
TO-247
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM ( ) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
January 2003
Value
500
500
±30
45
28.4
180
417
2.08
15
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(1) ISD ≤45A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
1/6