STW45NM50FD Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 500V - 0.07ohm - 45A TO-247 FDmesh™Power MOSFET With FAST DIODE

STW45NM50FD
N-CHANNEL 500V - 0.07Ω - 45A TO-247
FDmesh™Power MOSFET (With FAST DIODE)
TYPE
V_DSS
R_DS(on)
I_D
STW45NM50FD
500V
< 0.1Ω
45 A
n TYPICAL R_DS(on) = 0.07Ω
n HIGH dv/dt AND AVALANCHE CAPABILITIES
n 100% AVALANCHE TESTED
n LOW INPUT CAPACITANCE AND GATE
CHARGE
n LOW GATE INPUT RESISTANCE
n TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The FDmesh™ associates all advantages of re-
duced on-resistance and fast switching with an in-
trinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in par-
ticular ZVS phase-shift converters.
APPLICATIONS
n ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS FOR SMPS AND WELDING
EQUIPMENT
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (l) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
June 2002
Value
Unit
500
V
500
V
±30
V
45
A
28.4
A
180
A
417
W
2.08
W/°C
20
V/ns
–65 to 150
°C
150
°C
(1) I_SD ≤45A, di/dt ≤400A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
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