STW43NM60N Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 600 V, 0.075 Ω, 35 A MDmesh™ II Power MOSFET TO-247

STW43NM60N
N-channel 600 V, 0.075 Ω, 35 A MDmesh™ II Power MOSFET
TO-247
Features
Type
STW43NM60N
V_DSS
(@Tjmax)
650 V
R_DS(on)
max
<0.088 Ω
I_D
35 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
'
Table 1. Device summary
Order code
STW43NM60N
Marking
43NM60N
3
3#
Package
TO-247
Packaging
Tube
January 2009
Rev 3
1/12
www.st.com
12