STW43NM50N Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 500 V, 0.070 Ω, 37 A MDmesh™ II Power MOSFET TO-247

STW43NM50N
N-channel 500 V, 0.070 Ω, 37 A MDmesh™ II Power MOSFET
TO-247
Features
Type
STW43NM50N
V_{DSS @}
Tjmax
550 V
R_DS(on)
max
< 0.085 Ω
I_D
37 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
'
3
3#
Table 1. Device summary
Order code
STW43NM50N
Marking
43NM50N
Package
TO-247
Packaging
Tube
January 2010
Doc ID 14168 Rev 5
1/12
www.st.com
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