STW38NB20 Datasheet, PDF (1/5 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

STW38NB20
TYPE
STW38NB20
N - CHANNEL ENHANCEMENT MODE
PowerMESH™ MOSFET
VDSS
200 V
RDS(on)
< 0.065 Ω
ID
38 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.052 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, SGS-Thomson has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
January 1998
Value
Unit
200
V
200
V
± 30
V
38
A
24
A
152
A
180
1.44
W
W/^oC
5.5
-65 to 150
150
(1) ISD ≤38 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
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