STW37N60DM2AG Datasheet, PDF (1/12 Pages) STMicroelectronics – Extremely high dv/dt ruggedness

STW37N60DM2AG
Automotive-grade N-channel 600 V, 0.094 Ω typ., 28 A
MDmesh™ DM2 Power MOSFET in a TO-247 package
Datasheet - production data
Features
Order code
STW37N60DM2AG
VDS
600 V
RDS(on) max.
0.110 Ω
ID
28 A
PTOT
210 W
3
2
1
TO-247
Figure 1: Internal schematic diagram
 Designed for automotive applications and
AEC-Q101 qualified
 Fast-recovery body diode
 Extremely low gate charge and input
capacitance
 Low on-resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
 Zener-protected
Applications
 Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STW37N60DM2AG
Table 1: Device summary
Marking
37N60DM2
Package
TO-247
Packing
Tube
August 2015
DocID028243 Rev 1
This is information on a product in full production.
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