STW34NM60ND Datasheet, PDF (1/22 Pages) STMicroelectronics – N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247

STB34NM60ND, STF34NM60ND,
STP34NM60ND, STW34NM60ND
N-channel 600 V, 0.097 Ω typ., 29 A FDmesh™ II Power MOSFET
(with fast diode) in D²PAK, TO-220FP, TO-220 and TO-247
Datasheet — production data
Features
Order codes
V_DSS @T_J
max.
STB34NM60ND
STF34NM60ND
STP34NM60ND
STW34NM60ND
650 V
R_DS(on)
max.
0.110 Ω
I_D
29 A
■ The world’s best R_DS(on) in TO-220 amongst
the fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
TAB
3
1
D²PAK
TAB
3
2
1
TO-220
3
2
1
TO-220FP
TO-247
3
2
1
Applications
■ Switching applications
Description
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
Figure 1. Internal schematic diagram
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3
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Table 1. Device summary
Order codes
Marking
STB34NM60ND
STF34NM60ND
STP34NM60ND
STW34NM60ND
34NM60ND
34NM60ND
34NM60ND
34NM60ND
Package
D²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
October 2012
This is information on a product in full production.
Doc ID 18099 Rev 5
1/22
www.st.com
22