STW34NB20_04 Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 200V - 0.062 OHM - 34A TO-247 PowerMESH MOSFET

STW34NB20
N-CHANNEL 200V - 0.062 Ω - 34A TO-247
PowerMESH™ MOSFET
Table 1. General Features
Type
V_DSS
R_DS(on)
STW34NB20 200 V < 0.075 Ω
I_D
34 A
Figure 1. Package
FEATURES SUMMARY
■ TYPICAL R_DS(on) = 0.062 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
R_DS(on) per area, exceptional avalanche and dv/dt
capabilities and unrivalled gate charge and switch-
ing characteristics.
APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
■ HIGH CURRENT, HIGH SPEED SWITCHING
3
2
1
TO-247
Figure 2. Internal Schematic Diagram
Table 2. Order Codes
Part Number
STW34NB20
Marking
W34NB20
Package
TO-247
Packaging
TUBE
April 2004
REV. 2
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