STW34NB20 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

STW34NB20
N - CHANNEL ENHANCEMENT MODE
PowerMESH™ MOSFET
TYPE
V DSS
RDS(on)
ID
S TW 34NB 20
200 V < 0.075 Ω 34 A
s TYPICAL RDS(on) = 0.062 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
s HIGH CURRENT, HIGH SPEED SWITCHING
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS Drain-source Voltage (V_GS = 0)
VDGR
VGS
ID
I_D
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
I_DM ( •)
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 ^oC
Derating Factor
T_stg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
200
200
± 30
34
21
136
180
1.44
-65 to 150
150
(1) ISD ≤34A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Uni t
V
V
V
A
A
A
W
W/^oC
o_C
o_C
January 1998
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