STW33N20 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOSFET

STW33N20
N - CHANNEL ENHANCEMENT MODE
POWER MOSFET
TYPE
ST W33N20
V_DSS
200 V
R_DS(on)
< 0.085 Ω
I_D
33 A
s TYPICAL RDS(on) = 0.073 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100 ^oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 150 ^oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s DC-DC CONVERTERS & DC-AC INVERTERS
s TELECOMMUNICATION POWER SUPPLIES
s INDUSTRIAL MOTOR DRIVES
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS Drain-source Voltage (V_GS = 0)
VDGR Drain- gate Voltage (R_GS = 20 kΩ)
VGS Gate-source Voltage
I_D
Drain Current (continuous) at T_c = 25 ^oC
I_D
Drain Current (continuous) at T_c = 100 ^oC
IDM(•)
P_tot
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
Tstg St orage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
October 1997
Value
200
200
± 20
33
20
132
180
1.44
-65 to 150
150
Uni t
V
V
V
A
A
A
W
W/^oC
o_C
o_C
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