STW24NM65N Datasheet, PDF (1/19 Pages) STMicroelectronics – N-channel 650 V - 0.16 Ω - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh™ Power MOSFET

STW24NM65N-STI24NM65N-STF24NM65N
STB24NM65N - STP24NM65N
N-channel 650 V - 0.16 Ω - 19 A - TO-220 - TO-220FP - D²PAK
I²PAK - TO-247 second generation MDmesh™ Power MOSFET
Features
Type
STB24NM65N
STI24NM65N
STF24NM65N
STP24NM65N
STW24NM65N
V_DSS
(@T_Jmax)
710 V
710 V
710 V
710 V
710 V
R_DS(on) max
< 0.19 Ω
< 0.19 Ω
< 0.19 Ω
< 0.19 Ω
< 0.19 Ω
I_D
19 A
19 A
19 A⁽¹⁾
19 A
19 A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D²PAK
123
I²PAK
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STB24NM65N
STI24NM65N
STF24NM65N
STP24NM65N
STW24NM65N
Marking
24NM65N
24NM65N
24NM65N
24NM65N
24NM65N
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
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February 2008
Rev 1
1/19
www.st.com
19