STW240NF55 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 55V - 0.0027 Ω - 120A TO-247 STripFET™ II POWER MOSFET

STW240NF55
N-CHANNEL 55V - 0.0027 Ω - 120A TO-247
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
STW240NF55
55V <0.0035Ω
■ TYPICAL R_DS(on) = 0.0027Ω
■ STANDARD THRESHOLD DRIVE
■ 100% AVALANCHE TESTED
I_D(1)
120A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ OR-ING FUNCTION
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STW240NF55
MARKING
W240NF55
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_DGR
Drain-source Voltage (V_GS = 0)
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
I_D(1)
I_D(1)
I_DM(•)
Gate- source Voltage
Drain Current (continuous) at T_C = 25°C
Drain Current (continuous) at T_C = 100°C
Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽²⁾ Peak Diode Recovery voltage slope
E_AS(3)
Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(1)Current Limited by Package
May 2004
PACKAGE
TO-247
PACKAGING
TUBE
Value
55
55
± 20
120
120
480
500
3.33
5
3.5
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
-55 to 175
°C
(2) I_SD ≤ 120A, di/dt ≤ 600A/µs, V_DD ≤ 48V, T_j ≤ T_JMAX.
(3) Starting T_j = 25 ^oC, I_D = 60A, V_DD = 30V
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