STW23N85K5 Datasheet, PDF (1/13 Pages) STMicroelectronics – Ultra low gate charge

STW23N85K5
N-channel 850 V, 0.2 Ω typ., 19 A MDmesh™ K5
Power MOSFET in a TO-247 package
Datasheet - production data
3
2
1
TO-247
Figure 1: Internal schematic diagram
Features
Order code
VDS RDS(on) max. ID
PTOT
STW23N85K5 850 V 0.275 Ω 19 A 250 W
• Industry’s lowest R_DS(on) x area
• Industry’s best figure of merit (FoM)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STW23N85K5
Table 1: Device summary
Marking
Package
23N85K5
TO-247
Packing
Tube
August 2015
DocID023547 Rev 3
This is information on a product in full production.
1/13
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