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| STW220NF75 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 75V - 0.004OHM - 120A TO-247 STripFET II POWER MOSFET | |||
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STW220NF75
N-CHANNEL 75V - 0.004 ⦠- 120A TO-247
STripFET⢠II POWER MOSFET
TYPE
VDSS
RDS(on)
STW220NF75
75V <0.0044â¦
s TYPICAL RDS(on) = 0.004â¦
s STANDARD THRESHOLD DRIVE
s 100% AVALANCHE TESTED
ID
120A(**)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Sizeâ¢" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s AUTOMOTIVE 42V BATTERY SYSTEM
s OR-ING FUNCTION
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID(**)
Drain Current (continuous) at TC = 25°C
ID(**)
Drain Current (continuous) at TC = 100°C
IDM(â¢)
Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS(2)
Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Operating Junction Temperature
â¢) Pulse width limited by safe operating area.
(**) Current Limited by Package
May 2003
Value
75
75
± 20
120
120
480
500
3.33
10
2500
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD â¤120A, di/dt â¤100A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX
(2) Starting Tj = 25 oC, ID = 60 A, VDD = 30V
1/8
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