STW20NM50FD Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 500V - 0.22ohm - 20A TO-247 FDmesh™ Power MOSFET with FAST DIODE

STW20NM50FD
N-CHANNEL 500V - 0.22Ω - 20A TO-247
FDmesh™ Power MOSFET (with FAST DIODE)
TYPE
V_DSS
R_DS(on)
I_D
STW20NM50FD
500V
<0.25Ω
20 A
s TYPICAL R_DS(on) = 0.22Ω
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE TESTED
s LOW INPUT CAPACITANCE AND GATE CHARGE
s LOW GATE INPUT RESISTANCE
s TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The FDmesh™ associates all advantages of reduced
on-resistance and fast switching with an intrinsic fast-
recovery body diode. It is therefore strongly recom-
mended for bridge topologies, in particular ZVS phase-
shift converters.
APPLICATIONS
s ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS
FOR SMPS AND WELDING EQUIPMENT
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
June 2002
Value
500
500
±30
20
14
80
214
1.42
20
–65 to 150
150
(1)I_SD ≤20A, di/dt ≤400A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
(*)Limited only by maximum temperature allowed
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
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