|
STW20NC50 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 500V - 0.22ohm - 18.4A TO-247 PowerMesh™II MOSFET | |||
|
STW20NC50
N-CHANNEL 500V - 0.22⦠- 18.4A TO-247
PowerMeshâ¢II MOSFET
TYPE
VDSS
RDS(on)
ID
STW20NC50
500V < 0.27⦠18.4A
s TYPICAL RDS(on) = 0.22â¦
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHâ¢II is the evolution of the first
generation of MESH OVERLAYâ¢. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITH MODE LOW POWER SUPPLIES
(SMPS)
s HIGH CURRENT, HIGH SPEED SWITCHING
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(â¢)Pulse width limited by safe operating area
May 2001
Value
500
500
±30
18.4
11.6
73.6
220
1.75
2
â65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(1)ISD â¤18.4A, di/dt â¤100A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX.
1/8
|
▷ |