STW200NF03 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 30V - 0.002 ohm - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET™ II MOSFET

STW200NF03
N-CHANNEL 30V - 0.002 Ω - 120A TO-247
ULTRA LOW ON-RESISTANCE STripFET™ II MOSFET
TYPE
V_DSS
R_DS(on)
STW200NF03
30V <0.0028Ω
s TYPICAL R_DS(on) = 0.002 Ω
s 100% AVALANCHE TESTED
I_D
120A
DESCRIPTION
This Power MOSFET series realized with STMicroelec-
tronics unique STripFET process has specifically been
designed to minimize input capacitance and gate charge.
It is particularly suitable in OR-ing function circuits and
synchronous rectification.
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s HIGH CURRENT, HIGH SWITCHING SPEED
s OR-ING FUNCTION
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(•)
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(••) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(••) Pulse width limited by safe operating area.
(•)Current limited by package
October 2002
Value
30
30
± 20
120
120
480
350
2.33
1.5
4
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
-55 to 175
°C
(1) ISD ≤120A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting T_j = 25 ^oC, I_D = 60 A, V_DD= 15V
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