STW19NM60N Datasheet, PDF (1/13 Pages) STMicroelectronics – Low input capacitance and gate charge

STW19NM60N
Automotive-grade N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II
Power MOSFET in a TO-247 package
Datasheet - production data
Features
3
2
1
TO-247
Figure 1. Internal schematic diagram
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Order code
V_DS
(@T_jmax)
STW19NM60N 650 V
R_DS(on)
max.
I_D P_TOT
0.285 Ω 13 A 110 W
• Designed for automotive applications and
AEC-Q101 qualified
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
!-V
Order codes
STW19NM60N
Table 1. Device summary
Marking
Package
19NM60N
TO-247
Packaging
Tube
October 2013
This is information on a product in full production.
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