STW15NB50 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

STW15NB50
®
STH15NB50FI
N-CHANNEL 500V - 0.33Ω - 14.6A -
T0-247/ISOWATT218 PowerMESH™ MOSFET
TYPE
ST W15NB50
ST H15NB50FI
V_DSS
500 V
500 V
R_DS(on)
< 0.36 Ω
< 0.36 Ω
I_D
14.6 A
10.5 A
s TYPICAL RDS(on) = 0.33 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
V_DGR
VGS
ID
ID
I_DM ( •)
P_tot
dv/dt(1)
VISO
T_stg
Tj
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
Drain Current (pulsed)
Tot al Dissipation at T_c = 25 ^oC
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
June 1998
3
2
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
Value
STW15NB50 STH15NB50FI
500
500
± 30
14.6
10.5
9.2
6.6
58.4
58.4
190
80
0.64
1.52
4
4000
-65 to 150
150
Uni t
V
V
V
A
A
A
W
W/^oC
V/ ns
V
o_C
o_C
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