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STW14NC50 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 500V - 0.31W - 14A TO-247 PowerMesh II MOSFET
STW14NC50
N-CHANNEL 500V - 0.31Ω - 14A TO-247
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STW14NC50
500V
< 0.38Ω
14 A
s TYPICAL RDS(on) = 0.31Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns switching speed, gate
charge and ruggedness.
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s HIGH CURRENT, HIGH SPEED SWITCHING
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
Value
Unit
500
V
500
V
±30
V
14
A
8.7
A
56
A
190
W
1.5
W/°C
3.5
V/ns
–65 to 150
°C
150
°C
(1)ISD ≤14A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
May 2001
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