STW14NB50 Datasheet, PDF (1/5 Pages) STMicroelectronics – N-CHANNEL 500V - 0.40 ohm - 14A - TO-247 PowerMESH MOSFET

®
STW14NB50
N-CHANNEL 500V - 0.40 Ω - 14A - TO-247
PowerMESH™ MOSFET
TYPE
STW14NB50
VDSS
500 V
RDS(on)
< 0.45 Ω
ID
14 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.40 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
V_DGR
V_GS
I_D
I_D
I_DM(•)
P_tot
Parameter
Drain-source Voltage (VGS = 0)at Tc = 100 ^oC
Drain- gate Voltage (R_GS = 20 kΩ)at T_c = 100 ^oC
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
Value
500
500
± 30
14
8
52
190
1.51
Unit
V
V
V
A
A
A
W
W/^oC
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
4
-65 to 150
150
(1) ISD ≤14 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
April 1999
1/5
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.