STW13NB60 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL 600V - 0.48ohm - 13A - TO-247/ISOWATT218 PowerMESH MOSFET

STW13NB60
®
STH13NB60FI
N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218
PowerMESH™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
ST W13 NB6 0
ST H13 NB6 0FI
600 V
600 V
<0.54 Ω
<0.54 Ω
13 A
8.6 A
s TYPICAL R_DS(on) = 0.48 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
V_DS Drain-source Voltage (V_GS = 0)
V_DGR Drain- gate Voltage (R_GS = 20 kΩ)
V_GS Gate-source Voltage
I_D
Drain Current (continuous) at T_c = 25 ^oC
I_D
Drain Current (continuous) at T_c = 100 ^oC
I_DM (•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
V_ISO I nsulat ion W ithstand Voltage (DC)
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
Un it
STW13NB60 STH13NB60FP
600
V
600
V
± 30
V
13
8.6
A
8.2
5.4
A
52
52
A
190
1.52
80
0.64
W
W /^o C
4
4
V/ns

2000
V
-65 to 150
o_C
150
o_C
( 1) ISD ≤ 13 A, di/dt ≤ 200 Α/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
January 2000
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