STW12NC60 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 600V - 0.48ohm - 12A TO-247 PowerMeshII MOSFET

STW12NC60
N-CHANNEL 600V - 0.48Ω - 12A TO-247
PowerMesh™ II MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STW12NC60
600V
< 0.55Ω
12 A
s TYPICAL R_DS(on) = 0.48Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™ II is the evolution of the first
generation of MESH OVERLAY™ . The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s HIGH CURRENT, HIGH SPEED SWITCHING
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
Value
Unit
600
V
600
V
±30
V
12
A
8
A
18
A
190
W
1.52
W/°C
3
V/ns
–65 to 150
°C
150
°C
(1)I_SD ≤11A, di/dt ≤100A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
June 2000
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