STW12NB60 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh™II MOSFET

STW12NB60
N-CHANNEL 600V - 0.5Ω - 12A TO-247
PowerMesh™II MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STW12NB60
600V
< 0.6Ω
12 A
s TYPICAL R_DS(on) = 0.5Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
May 2001
Value
Unit
600
V
600
V
±30
V
12
A
7.56
A
48
A
190
W
1.52
W/°C
4
V/ns
–65 to 150
°C
150
°C
(1)I_SD ≤12A, di/dt ≤100A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
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