STW12N150K5 Datasheet, PDF (1/13 Pages) STMicroelectronics – Ultra low gate charge

STW12N150K5
N-channel 1500 V, 1.6 Ω typ.,7 A MDmesh™ K5
Power MOSFET in a TO-247 package
Datasheet - production data
3
2
1
TO-247
Figure 1: Internal schematic diagram
Features
Order code
VDS RDS(on) max. ID PTOT
STW12N150K5 1500 V 1.9 Ω 7 A 250 W
 Industry’s lowest R_{DS(on) *} area
 Industry’s best figure of merit (FoM)
 Ultra low gate charge
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STW12N150K5
Table 1: Device summary
Marking
12N150K5
Package
TO-247
Packing
Tube
July 2015
DocID027833 Rev 3
This is information on a product in full production.
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