STW10NC60 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh™II MOSFET

STW10NC60
STH10NC60FI
N-CHANNEL 600V - 0.6Ω - 10A - TO-247/ISOWATT218
PowerMesh™II MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STW10NC60
STH10NC60FI
600 V
600 V
< 0.75 Ω 10 A
< 0.75 Ω 10 A (*)
s TYPICAL R_DS(on) = 0.6 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_DGR
V_GS
Drain-source Voltage (V_GS = 0)
Drain-gate Voltage (R_GS = 20 kΩ)
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM (1)
P_TOT
Drain Current (pulsed)
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
V_ISO
T_stg
T_j
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
.
February 2002
Value
STW10NC60 STH10NC60FI
600
600
±30
10
10 (*)
6.3
6.3 (*)
40
40 (*)
160
60
1.28
0.48
3.5
-
2500
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
– 55 to 150
°C
(1)ISD ≤10A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(*) Limited only by Maximum Temperature Allowed
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