STW10NB60 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET

®
STW10NB60
N - CHANNEL 600V - 0.69Ω - 10A - TO-247
PowerMESH™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
ST W10NB 60
600 V < 0.8 Ω
10 A
s TYPICAL RDS(on) = 0.69 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
s HIGH CURRENT, HIGH SPEED SWITCHING
23
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V _DS
V _DGR
V_GS
I_D
ID
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
I_DM (•)
P_tot
Drain Current (pulsed)
T otal Dissipat ion at T_c = 25 ^oC
Derating Factor
dv/dt( 1) Peak Diode Recovery voltage slope
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
October 1998
Va l u e
600
600
± 30
10
6.2
40
160
1.28
4.5
-65 to 150
150
( 1) ISD ≤10A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it
V
V
V
A
A
A
W
W /^o C
V/ns
o_C
o_C
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