STV60NE06-16 Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL 60V - 0.013ohm - 60A PowerSO-10 STripFET POWER MOSFET

®
STV60NE06-16
N - CHANNEL 60V - 0.013Ω - 60A PowerSO-10
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
STV60NE06-16
60 V < 0.016 Ω
s TYPICAL RDS(on) = 0.013 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 ^oC
s APPLICATION ORIENTED
CHARACTERIZATION
I_D
60 A
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalance
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
PRELIMINARY DATA
10
1
PowerSO-10
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V _DS
V _DGR
V_GS
I_D
I_D
I_DM (•)
P_tot
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
T otal Dissipat ion at T_c = 25 ^oC
Derating Factor
dv/dt Peak Diode Recovery voltage slope
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
May 2000
Va l u e
Un it
60
V
60
V
± 20
V
60
A
42
A
240
A
150
W
1
W /^o C
6
-65 to 175
175
( 1) ISD ≤60 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
1/6