STV40NE03L-20 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 30V - 0.014ohm - 40A - PowerSO-10 STripFET MOSFET

STV40NE03L-20
N - CHANNEL 30V - 0.014Ω - 40A - PowerSO-10
STripFET™ MOSFET
TYPE
V_DSS
R_{DS( on )}
STV40NE03L-20 30 V < 0.020 Ω
s TYPICAL RDS(on) = 0.014 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s LOW GATE CHARGE A 100 ^oC
s APPLICATION ORIENTED
CHARACTERIZATION
I_D
40 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
10
1
PowerSO-10
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
V_DS
V_DGR
V_{G S}
I_D
ID
Drain-source Volt age (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
I_DM(•)
P_tot
Drain Current (pulsed)
Tot al Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt(1 ) Peak Diode Recovery voltage slope
T_stg Storage T emperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
May 2000
Va l u e
Unit
30
V
30
V
± 20
V
40
A
28
A
160
A
80
0.53
W
W /^o C
7
-65 to 175
175
( 1) ISD ≤ 40 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
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