STV200N55F3 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 55 V, 1.8 mΩ, 200 A, PowerSO-10 STripFET™ Power MOSFET

STV200N55F3
N-channel 55 V, 1.8 mΩ, 200 A, PowerSO-10
STripFET™ Power MOSFET
Features
Type
V_DSS
R_DS(on)
max
I_D ⁽¹⁾
STV200N55F3
55 V < 2.5 mΩ 200 A
10
1. Current limited by package
■ Conduction losses reduced
1
PowerSO-10
■ Low profile, very low parasitic inductance
t(s) Application
uc _{■ Switching applications}
rod _Description
te ^{P This n-channel enhancement mode Power}
le ^{MOSFET is the latest refinement of ST’s}
STripFET™ process. The resulting transistor
so shows extremely high packing density for low on
b _{resistance, rugged avalanche characteristics and}
O low gate charge.
Figure 1. Internal schematic diagram and
connection diagram (top view)
Obsolete ^{Product(s) - Table 1. Device summary}
Order code
Marking
Package
Packaging
STV200N55F3
200N55F3
PowerSO-10
Tape and reel
March 2009
Rev 3
1/12
www.st.com
12