STV160NF02LT4 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET™ II POWER MOSFET

STV160NF02L
N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STV160NF02L
20 V < 0.0025 Ω 160 A
s TYPICAL R_DS(on) = 0.0016 Ω
s LOW THRESHOLD DRIVE
) s ULTRA LOW ON-RESISTANCE
t(s ^{s ULTRA FAST SWITCHING}
s 100% AVALANCHE TESTED
uc s VERY LOW GATE CHARGE
d _{s LOW PROFILE, VERY LOW PARASITIC}
ro ⁾ INDUCTANCE PowerSO-10 PACKAGE
te ^{P ct(s DESCRIPTION}
le ^{u The STV160NF02L represents the second gener-}
d _{ation of Application Specific STMicroelectronics}
so ^{ro well established STripFET™ process based on a}
b ^{P very unique strip layout design. The resulting}
MOSFET shows unrivalled high packing density
- ^{O te with ultra low on-resistance and superior switching}
) ^{le charactestics. Process simplification also trans-}
t(s ^{o lates into improved manufacturing reproducibility.}
s This device is particularly suitable for high current,
c ^{b low voltage switching application where efficiency}
u _O ^{is crucial}
rod ^{- APPLICATIONS}
P _t(s) ^{s BUCK CONVERTERS IN HIGH}
PERFORMANCE TELECOM AND VRMs DC-
te ^c DC CONVERTERS
sole ^{rodu ABSOLUTE MAXIMUM RATINGS}
Symbol
Parameter
b P _VDS
Drain-source Voltage (V_GS = 0)
O _{te VDGR}
Drain-gate Voltage (R_GS = 20 kΩ)
ole ^VGS
Gate- source Voltage
s_ID(**)
Drain Current (continuos) at T_C = 25°C
Ob ^ID
Drain Current (continuos) at T_C = 100°C
10
1
PowerSO-10
INTERNAL SCHEMATIC DIAGRAM
CONNECTION DIAGRAM (TOP VIEW)
Value
Unit
20
V
20
V
± 15
V
160
A
113
A
I_DM ( ) Drain Current (pulsed)
640
A
P_TOT
Total Dissipation at T_C = 25°C
210
W
Derating Factor
1.4
W/°C
E_AS (1)
T_stg
Single Pulse Avalanche Energy
Storage Temperature
1.5
J
–65 to 175
°C
T_j
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
February 2004
175
°C
(1) Starting T_j=25°C , I_D = 80A, V_DD = 20V
(**)Limited only maximum junction temperature allowed by
PowerSO-10
1/8