STV160NF02LA Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 20V - 0.0018W - 160A PowerSO-10 STripFET TM POWER MOSFET

STV160NF02LA
N-CHANNEL 20V - 0.0018Ω - 160A PowerSO-10
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STV160NF02LA
20 V < 0.0027 Ω 160 A
s TYPICAL R_DS(on) = 0.0018 Ω
s LOW THRESHOLD DRIVE
s ULTRA LOW ON-RESISTANCE
s ULTRA FAST SWITCHING
s 100% AVALANCHE TESTED
s VERY LOW GATE CHARGE
s LOW PROFILE, VERY LOW PARASITIC
INDUCTANCE PowerSO-10 PACKAGE
DESCRIPTION
The STV160NF02LA represents the second gen-
eration of Application Specific STMicroelectronics
well established STripFET™ process based on a
very unique strip layout design. The resulting
MOSFET shows unrivalled high packing density
with ultra low on-resistance and superior switching
charactestics. Process simplification also trans-
lates into improved manufacturing reproducibility.
This device is particularly suitable for high current,
low voltage switching application where efficiency
is crucial
APPLICATIONS
s BUCK CONVERTERS IN HIGH
PERFORMANCE TELECOM AND VRMs DC-
DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(**)
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
E_AS (1) Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
Note: Marking will be STV160NF02AL
December 2000
10
1
PowerSO-10
INTERNAL SCHEMATIC DIAGRAM
CONNECTION DIAGRAM (TOP VIEW)
Value
Unit
20
V
20
V
± 15
V
160
A
113
A
640
A
210
W
1.4
W/°C
330
mJ
–65 to 175
°C
175
°C
(1) V_DD = 35V, I_D = 45A, R_G = 22Ω , L = 330µH, Starting T_j=25°C
(**)Limited only maximum junction temperature allowed by
PowerSO-10
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