STV160NF02L Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 20V - 0.0016ohm - 160A - PowerSO-10 STripFET MOSFET

®
STV160NF02L
N - CHANNEL 20V - 0.0016Ω - 160A - PowerSO-10
STripFET™ MOSFET
TYPE
V _DSS
R_{DS(on )}
I_D
STV160NF02L
20 V < 0.0025 Ω 160 A
s TYPICAL RDS(on) = 0.0016 Ω
s ULTRA LOW ON-RESISTANCE
s ULTRA FAST SWITCHING
s 100% AVALANCHE TESTED
s VERY LOW GATE CHARGE
s LOW THRESHOLD DRIVE
s LOW PROFILE, VERY LOW PARASITIC
INDUCTANCE PowerSO-10 PACKAGE
DESCRIPTION
The STV160NF02L represents the second
generation
of
Application
Specific
STMicroelectronics well established STripFET™
process based on a very unique strip layout
design. The resulting MOSFET shows unrivalled
high packing density with ultra low on-resistance
and superior switching charactestics. Process
simplification also translates into improved
manufacturing reproducibility. This device is
particularly suitable for high current, low voltage
switching application where efficiency is crucial.
APPLICATIONS
s BUCK CONVERTERS IN HIGH
PERFORMACE TELECOM AND VRMs
DC-DC CONVERTERS
10
1
PowerSO-10
INTERNAL SCHEMATIC DIAGRAM
CONNECTION DIAGRAM (TOP VIEW)
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
Va l u e
Unit
VDS Drain-source Voltage (VGS = 0)
20
V
V_DGR Drain- gate Voltage (R_GS = 20 kΩ)
20
V
V_{G S}
I_D(* *)
I_D
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
± 20
V
160
A
113
A
I_DM(•)
P_tot
Drain Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
Derating F actor
640
160
1.07
A
W
W /^o C
T_stg Storage Temperat ure
T_j Max. Operating Junction T emperature
-65 to 175
o_C
175
o_C
(•) Pulse width limited by safe operating area
( **) Limited only maximum junction temperature allowed by PowerSO-10
June 1999
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