STU8NB90 Datasheet, PDF (1/5 Pages) STMicroelectronics – N-CHANNEL 900V - 0.7ohm - 8.9A - Max220 PowerMESH MOSFET

®
STU8NB90
N-CHANNEL 900V - 0.7Ω - 8.9A - Max220
PowerMESH™ MOSFET
ADVANCE DATA
TYPE
STU8NB90
VDSS
900 V
RDS(on)
<1Ω
ID
8.9 A
s TYPICAL RDS(on) = 0.7 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s ± 30V GATE TO SOURCE VOLTAGE RATING
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
23
1
Max220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDS
V_DGR
V_GS
I_D
I_D
I_DM(•)
P_tot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
900
900
± 30
8.9
5.6
35
160
1.28
V
V
V
A
A
A
W
W/^oC
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
4.5
-65 to 150
150
(1) ISD ≤8.9 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
December 1998
1/5
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.