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STU8NA80 Datasheet, PDF (1/5 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE
STU8NA80
STU8NA80
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
VDSS
800 V
RDS(on)
< 1.0 Ω
ID
8.3 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.85 Ω
s EFFICIENT AND RELAIBLE MOUNTING
THROUGH CLIP
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE
SPREAD.
DESCRIPTION
The Max220TM package is a new high volume
power package exibiting the same footprint as the
industry standard TO-220, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages. The increased die
capacity makes the device ideal to reduce
component count in multiple paralleled TO-220
designs and save board space with respect to
larger packages.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES (UPS)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID
Drain Current (continuous) at Tc = 25 oC
ID
Drain Current (continuous) at Tc = 100 oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 1996
123
Max220TM
INTERNAL SCHEMATIC DIAGRAM
Value
800
800
± 30
8.3
5.3
33.2
160
1.28
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/oC
oC
oC
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