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STU7NB90 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh™ MOSFET | |||
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STU7NB90
STU7NB90I
N-CHANNEL 900V - 1.1 ⦠- 7.3 A Max220/Max220I
PowerMesh⢠MOSFET
TYPE
VDSS
RDS(on)
ID
STU7NB90
900 V < 1.45 ⦠7.3 A
STU7NB90I
900 V < 1.45 ⦠7.3 A
s TYPICAL RDS(on) = 1.1 â¦
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
DESCRIPTION
Using the latest high voltage MESH OVERLAYâ¢
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Companyâs proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
23
1
Max220
Max220I
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(â¢)Pulse width limited by safe operating area
May 2001
Value
Unit
STU7NB90
STU7NB90I
900
V
900
V
±30
V
7.3
7.3 (*)
A
4.6
4.6 (*)
A
29.2
29.2 (*)
A
170
60
W
1.36
0.47
W/°C
4
V/ns
-
2500
V
â65 to 150
°C
150
°C
(1) ISD â¤7.3 A, di/dt â¤200A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX.
(*) Current Limited by Package
1/9
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