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STU7NB100 Datasheet, PDF (1/5 Pages) STMicroelectronics – N - CHANNEL 1000V - 1.2ohm - 7.3A - Max220 PowerMESH MOSFET | |||
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®
TYPE
STU7NB100
STU7NB100
N - CHANNEL 1000V - 1.2⦠- 7.3A - Max220
PowerMESH⢠MOSFET
VDSS
1000 V
RDS(on)
< 1.5 â¦
ID
7.3 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 1.2 â¦
s EXTREMELY HIGH dv/dt CAPABILITY
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
3
s REDUCED VOLTAGE SPREAD
12
DESCRIPTION
Using the latest high voltage MESH OVERLAYâ¢
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Companyâs proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
Max220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kâ¦)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(â¢)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(â¢) Pulse width limited by safe operating area
March 1999
Value
Unit
1000
V
1000
V
± 30
V
7.3
A
4.7
A
29
A
160
1.28
W
W/oC
4
V/ns
-65 to 150
oC
150
oC
(1) ISD â¤7.3 Î, di/dt ⤠200 A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX
1/5
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