STU7NA80 Datasheet, PDF (1/5 Pages) STMicroelectronics – N - CHANNEL 800V - 1.3ohm - 6.5A - Max220 FAST POWER MOSFET

®
TYPE
STU7NA80
STU7NA80
N - CHANNEL 800V - 1.3Ω - 6.5A - Max220
FAST POWER MOSFET
VDSS
800 V
RDS(on)
< 1.5 Ω
ID
6.5 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 1.3 Ω
s ± 30V GATE TO SOURCE VOLTAGE RATING
s REPETITIVE AVALANCHE TESTED DATA
AT 100 ^oC
s LOW INTRINSIC CAPACITANCE
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
The Max220^TM package is a new high volume
power package exibiting the same footprint as the
industry standard TO-220, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages. The increased die
capacity makes the device ideal to reduce
component count in multiple paralleled TO-220
designs and save board space with respect to
larger packages.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s CONSUMER AND INDUSTRIAL LIGHTING
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES (UPS)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM(•)
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1998
123
Max220^TM
INTERNAL SCHEMATIC DIAGRAM
Value
800
800
± 30
6.5
4.3
26
145
1.16
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/^oC
o_C
o_C
1/5