STU13NB60 Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

STU13NB60
N-CHANNEL ENHANCEMENT MODE
PowerMESH™ MOSFET
TYPE
STU13NB60
V DSS
600 V
RDS(on)
< 0.45 Ω
ID
12.6 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.4 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s ± 30V GATE TO SOURCE VOLTAGE RATING
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R_DS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
23
1
Max220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V_DS
V_DGR
VGS
ID
ID
I_DM ( •)
P_tot
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
Drain Current (pulsed)
Tot al Dissipation at T_c = 25 ^oC
Derating Factor
600
600
± 30
12.6
7.9
50.4
160
1.28
V
V
V
A
A
A
W
W/^oC
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
4.5
-65 to 150
150
(1) ISD ≤13A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ ns
o_C
o_C
October 1997
1/6
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.