STU12N60M2 Datasheet, PDF (1/12 Pages) STMicroelectronics – Extremely low gate charge

STU12N60M2
N-channel 600 V, 0.395 Ω typ., 9 A MDmesh™ M2
Power MOSFET in an IPAK package
Datasheet - production data
TAB
3
2
1
IPAK
Figure 1: Internal schematic diagram
Features
Order code
STU12N60M2
VDS
600 V
RDS(on) max.
0.450 Ω
ID
PTOT
9 A 85 W
• Extremely low gate charge
• Excellent output capacitance (C_OSS) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Order code
STU12N60M2
Table 1: Device summary
Marking
Package
12N60M2
IPAK
Packing
Tube
May 2015
DocID027901 Rev 1
This is information on a product in full production.
1/12
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