STU10NB80 Datasheet, PDF (1/5 Pages) STMicroelectronics – N - CHANNEL 800V - 0.65ohm - 10A - Max220 PowerMESHO MOSFET

STU10NB80
N - CHANNEL 800V - 0.65Ω - 10A - Max220
PowerMESH™ MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STU10NB80
800 V < 0.8 Ω
10 A
s TYPICAL RDS(on) = 0.65 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
23
1
Max220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
s HIGH CURRENT, HIGH SPEED SWITCHING
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS Drain-source Voltage (V_GS = 0)
V_DGR
V_GS
I_D
ID
I_DM(•)
P_tot
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
800
800
± 30
10
6.3
40
160
1.28
4
-65 to 150
150
(1) ISD ≤10 Α, ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
April 1999
Unit
V
V
V
A
A
A
W
W/^oC
V/ns
o_C
o_C
1/5