STTH8T06 Datasheet, PDF (1/9 Pages) STMicroelectronics – Very low switching losses

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A
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TO-220AC ins
STTH8T06DI
Table 1. Device summary
Symbol
Value
I_F(AV)
V_RRM
t_rr (typ)
I_RM (typ)
V_F (typ)
I_FRM)
T_j (max)
8A
600 V
15 ns
2.3 A
2.05 V
40 A
175 °C
STTH8T06
600 V tandem extra fast diode
Datasheet  production data
Features
 High voltage rectifier
 Tandem diodes in series
 Very low switching losses
 Insulated device with internal ceramic
 Equal thermal conditions for both 300 V diodes
 Static and dynamic equilibrium of internal
diodes are warranted by design
 Insulated package:
– Capacitance: 7 pF
– Insulated voltage: 2500 V rms
Description
This device is part of ST's second generation of
600 V tandem diodes. It has ultralow switching-
losses with a minimized Q_RR (6 nC) that makes it
perfect for use in circuits working in hard-
switching mode. In particular the V_F/Q_RR trade-off
positions this device between standard ultrafast
diodes and silicon-carbide Schottky rectifiers in
terms of price/performance ratio.
The device offers a new positioning giving more
flexibility to power-circuit designers looking for
good performance while still respecting cost
constraints.
Featuring ST's Turbo 2 600 V technology, the
device is particularly suited as a boost diode in
continuous conduction mode power factor
correction circuits.
April 2013
This is information on a product in full production.
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