STTH8ST06 Datasheet, PDF (1/9 Pages) STMicroelectronics – Very low switching losses

STTH8ST06
600 V tandem extra fast diode
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Features
• High voltage rectifier
• Tandem diodes in series
• Very low switching losses
• Insulated device with internal ceramic
• Equal thermal conditions for both 300 V diodes
• Static and dynamic equilibrium of internal
diodes are warranted by design
• Insulated package:
– Insulated voltage: 2500 V_RMS sine
Datasheet − production data
Description
This device is part of ST's second generation of
600 V tandem diodes. It has ultralow switching-
losses with a minimized Q_RR that makes it perfect
for use in circuits working in hard-switching mode.
In particular the V_F/Q_RR trade-off positions this
device between standard ultrafast diodes and
silicon-carbide Schottky rectifiers in terms of
price/performance ratio.
The device offers a new positioning giving more
flexibility to power-circuit designers looking for
good performance while still respecting cost
constraints.
Featuring ST's Turbo 2 600 V technology, the
device is particularly suited as a boost diode in
continuous conduction mode power factor
correction circuits.
Table 1. Device summary
Symbol
Value
I_F(AV)
V_RRM
t_rr (typ)
I_RM (typ)
V_F (typ)
I_FRM
T_j (max)
8A
600 V
13 ns
2A
2.5 V
40 A
175 °C
July 2015
This is information on a product in full production.
DocID024150 Rev 2
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