STTH812 Datasheet, PDF (1/11 Pages) STMicroelectronics – Ultrafast recovery - 1200 V diode

STTH812
Ultrafast recovery - 1200 V diode
Main product characteristics
I_F(AV)
V_RRM
T_j
V_F (typ)
t_rr (typ)
8A
1200 V
175° C
1.25 V
50 ns
Features and benefits
■ Ultrafast, soft recovery
■ Very low conduction and switching losses
■ High frequency and/or high pulsed current
operation
■ High reverse voltage capability
■ High junction temperature
■ Insulated packages:
– TO-220Ins
Electrical insulation = 2500 V_RMS
Capacitance = 7 pF
– TO-220FPAC
Electrical insulation = 2000 V_RMS
Capacitance = 12 pF
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage current,
and therefore thermal runaway guard band, is an
immediate competitive advantage for this device.
A
A
K
TO-220AC
STTH812D
K
A
NC
D²PAK
STTH812G
Order codes
Part Number
STTH812D
STTH812G
STTH812G-TR
STTH812FP
STTH812DI
K
A
K
TO-220FPAC
STTH812FP
A
K
TO-220Ins
STTH812DI
Marking
STTH812D
STTH812G
STTH812G
STTH812FP
STTH812DI
March 2006
Rev 1
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