STTH810 Datasheet, PDF (1/11 Pages) STMicroelectronics – Ultrafast recovery - high voltage diode

STTH810
Ultrafast recovery - high voltage diode
Main product characteristics
I_F(AV)
V_RRM
T_j
V_F (typ)
t_rr (typ)
8A
1000 V
175° C
1.30 V
47 ns
Features and benefits
■ Ultrafast, soft recovery
■ Very low conduction and switching losses
■ High frequency and/or high pulsed current
operation
■ High reverse voltage capability
■ High junction temperature
■ Insulated packages:
– TO-220Ins
– Electrical insulation = 2500 V_RMS
Capacitance = 7 pF
– TO-220FPAC
Electrical insulation = 2500 V_RMS
Capacitance = 12 pF
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
A
A
K
TO-220AC
STTH810D
K
A
NC
D²PAK
STTH810G
Order codes
Part Number
STTH810D
STTH810G
STTH810G-TR
STTH810FP
STTH810DI
March 2006
Rev 1
K
A
K
TO-220FPAC
STTH810FP
A
K
TO-220Ins
STTH810DI
Marking
STTH810D
STTH810G
STTH810G
STTH810FP
STTH810DI
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