STTH806DTI_07 Datasheet, PDF (1/7 Pages) STMicroelectronics – Tandem 600 V hyperfast boost diode

STTH806DTI
Tandem 600 V hyperfast boost diode
Table 1. Main product characteristics
I_F(AV)
8A
V_RRM
600 V
T_{j (max)}
150° C
V_{F (max)}
2.24 V
I_{RM (typ.)}
4A
t_{rr (typ.)}
13 ns
Features and benefits
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2
2
1
Insulated TO-220AC
■ Especially suited as boost diode in continuous
mode power factor correctors and hard
switching conditions
■ Designed for high di/dt operation. Hyperfast
recovery current to compete with SiC devices.
Allows downsizing of mosfet and heatsinks
■ Internal ceramic insulated devices with equal
thermal conditions for both 300 V diodes
■ Insulation (2500 V_RMS) allows placement on
same heatsink as mosfet and flexible
heatsinking on common or separate heatsink
■ Static and dynamic equilibrium of internal
diodes are warranted by design
■ Package Capacitance: C = 7 pF
Description
The TURBOSWITCH “H” is an ultra high
performance diode composed of two 300 V dice
in series. TURBOSWITCH “H” family drastically
cuts losses in the associated MOSFET when run
at high dI_F/dt.
Table 2. Order codes
Part number
Marking
STTH806DTI
STTH806DTI
Table 3. Absolute ratings (limiting values)
Symbol
Parameter
V_RRM
I_F(RMS)
I_FSM
T_stg
T_j
Repetitive peak reverse voltage
RMS forward voltage
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
t_p = 10 ms sinusoidal
Value
Unit
600
V
14
A
180
A
-65 to + 150 ° C
150
°C
July 2007
Rev 5
1/7
www.st.com
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