STTH806DTI_05 Datasheet, PDF (1/6 Pages) STMicroelectronics – Tandem 600V HYPERFAST BOOST DIODE

®
STTH806DTI
Tandem 600V HYPERFAST BOOST DIODE
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
T_j
V_F (typ)
I_RM typ.)
t_rr (max)
8A
600 V
150°C
2.24 V
4A
13 ns
FEATURES AND BENEFITS
■ Especially suited as boost diode in continuous
mode power factor correctors and hard
switching conditions
■ Designed for high dI/dt operation. Hyperfast
recovery current to compete with SIC devices.
Allows downsizing of mosfet and heatsinks
■ Internal ceramic insulated devices with equal
thermal conditions for both 300V diodes
■ Insulation (2500V_RMS) allows placement on
same heatsink as MOSFET and flexible
heatsinking on common or separate heatsink
■ Static and dynamic equilibrium of internal
diodes are warranted by design
■ Package capacitance: C=7pF
1
2
2
1
Insulated TO-220AC
DESCRIPTION
The TURBOSWITCH “H” is an ultra high
performance diode composed of two 300V dice in
series. TURBOSWITCH “H” family drastically cuts
losses in the associated MOSFET when run at
high dIF/dt.
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
V_RRM Repetitive peak reverse voltage
600
V
I_F(RMS) RMS forward voltage
14
A
I_FSM Surge non repetitive forward current
tp = 10ms sinusoidal
180
A
Ipeak Peak current waveform
δ = 0.15 Tc = 130°C
17
A
T_stg Storage temperature range
-65 to + 150 °C
T_j Maximum operating junction temperature
+ 150
°C
Order Codes
Part Number
STTH806DTI
Marking
STTH806DTI
June 2005
REV. 4
1/6