STTH802CT Datasheet, PDF (1/8 Pages) STMicroelectronics – HIGH EFFICIENCY ULTRAFAST DIODE

®
STTH802CT/CB/CFP
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
2 x 4A
200 V
175 °C
V_F (max)
trr (max)
0.95 V
20 ns
FEATURES AND BENEFITS
s Suited for SMPS
s Low losses
s Low forward and reverse recovery times
s High surge current capability
s High junction temperature
s Insulated package: TO-220FPAB
DESCRIPTION
Dual center tap rectifier suited for Switch Mode
Power Supplies and High frequency DC to DC
converters.
Packaged in DPAK, TO-220AB or TO-220FPAB.
This device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection applications.
A1
K
A2
A2
K
A1
TO-220AB
STTH802CT
K
A2
K
A1
TO-220FPAB
STTH802CFP
K A2
A1
DPAK
STTH802CB
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value Unit
V_RRM Repetitive peak reverse voltage
200
V
I_F(RMS) RMS forward current TO-220AB / TO-220FPAB / DPAK
10
A
I_F(AV) Average forward
TO-220AB / DPAK Tc = 155°C Per diode
4
A
current δ =0.5
TO-220FPAB
Tc = 145°C
TO-220AB / DPAK Tc = 150°C Per device
8
A
TO-220FPAB
Tc = 130°C
I_FSM Surge non repetitive forward current
tp = 10 ms Sinusoidal
50
A
T_stg Storage temperature range
- 65 + 175 °C
Tj Maximum operating junction temperature
175
°C
April 2002 - Ed: 1A
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